ECE3312 Practice Exam 1

ECE3312 Practice Exam 1

1. A silicon sample at room temperature has an intrinsic carrier concentration of ni = 5×109
cm-3
. It is doped with ND = 6.1×1016 arsenic atoms/cm3 and NA = 6×1012 boron atoms/cm3
. The electron mobility is measured as μn = 1600 cm2/V·s and the hole mobility is μp = 480 cm2/V·s.
Is this material p or n-type?
What is the hole concentration?
If an external electrical field of E =90V/cm is applied across this silicon sample, what is
the electron current density in this material?

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